-
38
-
-
31144453261
-
-
X. Guo J. P. Small J. E. Klare Y. Wang M. S. Purewal I. W. Tam B. H. Hong R. Caldwell L. Huang S. O'Brien J. Yan R. Breslow S. J. Wind J. Hone P. Kim C. Nuckolls Science 2006 311 356
-
(2006)
Science
, vol.311
, pp. 356
-
-
Guo, X.1
Small, J.P.2
Klare, J.E.3
Wang, Y.4
Purewal, M.S.5
Tam, I.W.6
Hong, B.H.7
Caldwell, R.8
Huang, L.9
O'Brien, S.10
Yan, J.11
Breslow, R.12
Wind, S.J.13
Hone, J.14
Kim, P.15
Nuckolls, C.16
-
39
-
-
84870497080
-
-
Y. Cao S. Dong S. Liu L. He L. Gan X. Yu M. L. Steigerwald X. Wu Z. Liu X. Guo Angew. Chem., Int. Ed. 2012 51 12228
-
(2012)
Angew. Chem., Int. Ed.
, vol.51
, pp. 12228
-
-
Cao, Y.1
Dong, S.2
Liu, S.3
He, L.4
Gan, L.5
Yu, X.6
Steigerwald, M.L.7
Wu, X.8
Liu, Z.9
Guo, X.10
-
45
-
-
84878392485
-
-
P. C. Sims I. S. Moody Y. Choi C. Dong M. Iftikhar B. L. Corso O. T. Gul P. G. Collins G. A. Weiss J. Am. Chem. Soc. 2013 135 7861
-
(2013)
J. Am. Chem. Soc.
, vol.135
, pp. 7861
-
-
Sims, P.C.1
Moody, I.S.2
Choi, Y.3
Dong, C.4
Iftikhar, M.5
Corso, B.L.6
Gul, O.T.7
Collins, P.G.8
Weiss, G.A.9
-
46
-
-
84882400883
-
-
C. Jia J. Wang C. Yao Y. Cao Y. Zhong Z. R. Liu Z. F. Liu X. Guo Angew. Chem., Int. Ed. 2013 52 8666
-
(2013)
Angew. Chem., Int. Ed.
, vol.52
, pp. 8666
-
-
Jia, C.1
Wang, J.2
Yao, C.3
Cao, Y.4
Zhong, Y.5
Liu, Z.R.6
Liu, Z.F.7
Guo, X.8
-
47
-
-
79952256979
-
-
S. Liu X. Zhang W. Luo Z. Wang X. Guo M. L. Steigerwald X. Fang Angew. Chem., Int. Ed. 2011 50 2496
-
(2011)
Angew. Chem., Int. Ed.
, vol.50
, pp. 2496
-
-
Liu, S.1
Zhang, X.2
Luo, W.3
Wang, Z.4
Guo, X.5
Steigerwald, M.L.6
Fang, X.7
-
49
-
-
77951699538
-
-
S. P. Liu S. H. Weisbrod Z. Tang A. Marx E. Scheer A. Erbe Angew. Chem., Int. Ed. 2010 49 3313
-
(2010)
Angew. Chem., Int. Ed.
, vol.49
, pp. 3313
-
-
Liu, S.P.1
Weisbrod, S.H.2
Tang, Z.3
Marx, A.4
Scheer, E.5
Erbe, A.6
-
50
-
-
84907821926
-
-
We define the cutting yield as the fraction of graphene transistors on a chip that are electrically disconnected after oxygen plasma etching, and the connection yield as the fraction of the completely-broken devices that get reconnected after molecular connection To address the number of junctions that contribute to the charge transport, we theoretically calculated the probability of the reconnected devices with n-rejoined junctions by using the binomial distribution. If the connection yield is among 20-30%, the ratio of single-junction devices to the overall reconnected devices is ∼82-89%. These suggest that in most cases, only one or two junctions contribute to the charge transport of the devices. The detailed calculation can be found in ref. 39
-
L. Sun Y. A. Diaz-Fernandez T. A. Gschneidtner F. Westerlund S. Lara-Avilab K. Moth-Poulsen Chem. Soc. Rev. 2014 43 7378
-
(2014)
Chem. Soc. Rev.
, vol.43
, pp. 7378
-
-
Sun, L.1
Diaz-Fernandez, Y.A.2
Gschneidtner, T.A.3
Westerlund, F.4
Lara-Avilab, S.5
Moth-Poulsen, K.6
-
51
-
-
78649339832
-
-
Z. Fang J. Huang P. Lie Z. Xiao C. Ouyang Q. Wu Y. Wu G. Liu L. Zeng Chem. Commun. 2010 46 9043
-
(2010)
Chem. Commun.
, vol.46
, pp. 9043
-
-
Fang, Z.1
Huang, J.2
Lie, P.3
Xiao, Z.4
Ouyang, C.5
Wu, Q.6
Wu, Y.7
Liu, G.8
Zeng, L.9
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