Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Applied Physics Letters

Volumn 106, Issue 10, 2015, Pages

  Ergen, Onur ^a,b   Gibb, Ashley ^a,b   Vazquez Mena, Oscar ^a,b   Regan, William Raymond ^a,b   Zettl, Alex ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; METAL INSULATOR BOUNDARIES; PASSIVATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SOLAR CELLS;

CUPROUS OXIDE; DIRECT GROWTH; HEXAGONAL BORON NITRIDE (H-BN); INSULATION LAYERS; METAL-INSULATOR-SEMICONDUCTORS; PASSIVATING LAYER; SCHOTTKY; SCHOTTKY SOLAR CELLS;

MIS DEVICES;

EID: 84924663251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4914181     Document Type: Article

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