Method to determine the optimal silicon nanowire length for photovoltaic devices

Applied Physics Letters

Volumn 106, Issue 9, 2015, Pages

  Li, Yingfeng ^a   Li, Meicheng ^a,b   Li, Ruike ^a   Fu, Pengfei ^a   Chu, Lihua ^a   Song, Dandan ^a  

^a NORTH CHINA ELECTRIC POWER UNIVERSITY   (China)

^b Chongqing Materials Research Institute   (China)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; SOLAR CELLS;

CARRIER RECOMBINATION; HIGH LIGHTS; LIGHT INTENSITY; LIGHT-HARVESTING; PHOTOVOLTAIC DEVICES; SILICON NANOWIRES; WHOLE LENGTHS;

SILICON;

EID: 84924365898     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4914372     Document Type: Article

References (23)

1. B. Tian, X. Zheng, T. J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, and C. M. Lieber, Nature 449, 885 (2007). 10.1038/nature06181
2. A. I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J.-K. Yu, W. A. Goddard III, and J. R. Heath, Nature 451, 168 (2008). 10.1038/nature06458
3. K.-Q. Peng and S.-T. Lee, Adv. Mater. 23, 198 (2011). 10.1002/adma.201002410
4. R. H. Coridan, K. A. Arpin, B. S. Brunschwig, P. V. Braun, and N. S. Lewis, Nano Lett. 14, 2310 (2014). 10.1021/nl404623t
5. C.-L. Hsin, W. Mai, Y. Gu, Y. Gao, C.-T. Huang, Y. Liu, L.-J. Chen, and Z.-L. Wang, Adv. Mater. 20, 3919 (2008). 10.1002/adma.200800485
6. X. X. Lin, X. Hua, Z. G. Huang, and W. Z. Shen, Nanotechnology 24, 235402 (2013). 10.1088/0957-4484/24/23/235402
7. T. Tiedje, E. Yablonovitch, G. D. Cody, and B. G. Brooks, IEEE Trans. Electron Devices 31, 711 (1984). 10.1109/T-ED.1984.21594
8. S. Bhattacharya, D. Banerjee, K. W. Adu, S. Samui, and S. Bhattacharyya, Appl. Phys. Lett. 85, 2008 (2004). 10.1063/1.1787164
9. T.-H. Pei, S. Thiyagu, and Z. Pei, Appl. Phys. Lett. 99, 153108 (2011). 10.1063/1.3650266
10. L. Cao, P. Fan, A. P. Vasudev, J. S. White, Z. Yu, W. Cai, J. A. Schuller, S. Fan, and M. L. Brongersma, Nano Lett. 10, 439 (2010). 10.1021/nl9036627
11. O. Gunawan and S. Guha, Sol. Energy Mater. Sol. Cells 93, 1388 (2009). 10.1016/j.solmat.2009.02.024
12. F. Bai, M. Li, R. Huang, Y. Yu, T. Gu, Z. Chen, H. Fan, and B. Jiang, J. Nanopart. Res. 15, 1915 (2013) 10.1007/s11051-013-1915-8.
13. A. C. Lind and J. M. Greenberg, J. Appl. Phys. 37, 3195 (1966). 10.1063/1.1703184
14. J. K. Mann, R. Kurstjens, G. Pourtois, M. Gilbert, F. Dross, and J. Poortmans, Prog. Mater. Sci. 58, 1361 (2013). 10.1016/j.pmatsci.2013.03.001
15. H.-P. Wang, T.-Y. Lin, C.-W. Hsu, M.-L. Tsai, C.-H. Huang, W.-R. Wei, M.-Y. Huang, Y.-J. Chien, P.-C. Yang, and C.-W. Liu, ACS Nano 7, 9325 (2013). 10.1021/nn404015y
16. E. Garnett and P. Yang, Nano Lett. 10, 1082 (2010). 10.1021/nl100161z
17. J. E. Allen, E. R. Hemesath, D. E. Perea, J. L. Lensch-Falk, Z. Y. Li, F. Yin, M. H. Gass, P. Wang, A. L. Bleloch, R. E. Palmer, and L. J. Lauhon, Nat. Nanotechnol. 3, 168 (2008). 10.1038/nnano.2008.5
18. J. Geist, The Index of Refraction of Silicon in the Visible and Very Near IR-Silicon (Si) Revisited (1.1-3.1 eV) (Academic Press, New York, 1998).
19. B. T. Draine and P. J. Flatau, e-print arXiv:1305.6497.
20. C. F. Bohren and D. R. Huffman, Absorption and Scattering of Light by Small Particles (John Wiley & Sons, 2008).
21. See supplementary material at http://dx.doi.org/10.1063/1.4914372 E-APPLAB-106-066510 for the light intensity variations in the SiNWs with lengths 2, 4, and 6 μ m.
22. K. T. Fountaine, C. G. Kendall, and H. A. Atwater, Opt. Express 22, A930 (2014). 10.1364/OE.22.00A930
23. H. Wang, Appl. Phys. Lett. 103, 093101 (2013). 10.1063/1.4816246