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Applied Physics Letters

Volumn 106, Issue 4, 2015, Pages

Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films

(4) Niemelä, Janne Petteri a Hirose, Yasushi b,c,d Hasegawa, Tetsuya b,c,d Karppinen, Maarit a

a AALTO UNIVERSITY (Finland)

b UNIVERSITY OF TOKYO (Japan)

c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRON SCATTERING; GRAIN BOUNDARIES; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE; THIN FILMS; TITANIUM DIOXIDE;

ATOMIC LAYER DEPOSITED; GLASS SUBSTRATES; GRAIN BOUNDARY SCATTERING; GRAIN SCATTERING; HALL MEASUREMENTS; HIGH TRANSMITTANCE; SCATTERING MECHANISMS; TRANSPARENT CONDUCTING OXIDE;

NIOBIUM;

EID: 84923911432 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4906865 Document Type: Article

Times cited : (17)

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