Direct evidence of void passivation in Cu(InGa)(SSe)2 absorber layers

Applied Physics Letters

Volumn 106, Issue 8, 2015, Pages

  Lee, Dongho ^a   Lee, Jaehan ^a   Heo, Sung ^b   Park, Jong Bong ^b   Kim, Young Su ^a   Mo, Chan B ^a   Huh, Kwangsoo ^a   Yang, Jungyup ^a   Nam, Junggyu ^a   Baek, Dohyun ^a   Park, Sungchan ^a   Kim, Byoungjune ^a   Kim, Dongseop ^a   Kang, Yoonmook ^c  

^a Samsung SDI   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; SOLAR CELLS; SULFUR; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

CHARGE COLLECTION; DEVICE PERFORMANCE; ELECTRON BEAM INDUCED CURRENT METHODS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; PERFORMANCE ENHANCEMENTS; ROOM TEMPERATURE; SEQUENTIAL PROCESS; SULFUR CONCENTRATIONS;

PASSIVATION;

EID: 84923862427     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4913612     Document Type: Article

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