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29 τ b - 1 =v (α) / (F · l), τ d - 1 = D α 4 / 4 and τ U - 1 = B α 2 T e - C / T / 2. Using B = 2.3 × 10 - 19 s / K, C = 185 K, D = 2 × 10 - 47 s 3, F = 0.9, and l = 2.82 × 10 - 3 m, we reproduce the measured lattice thermal conductivity of bulk silicon (A. V. Inyushkin, A. N. Taldenkov, A. M. Gibin, A. V. Gusev, and H.-J. Pohl, Phys. Status Solidi C 11, 2995 (2004)) within 15% error from 5 K to 300 K
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29 τ b - 1 =v (α) / (F · l), τ d - 1 = D α 4 / 4 and τ U - 1 = B α 2 T e - C / T / 2. Using B = 2.3 × 10 - 19 s / K, C = 185 K, D = 2 × 10 - 47 s 3, F = 0.9, and l = 2.82 × 10 - 3 m, we reproduce the measured lattice thermal conductivity of bulk silicon (A. V. Inyushkin, A. N. Taldenkov, A. M. Gibin, A. V. Gusev, and H.-J. Pohl, Phys. Status Solidi C 11, 2995 (2004)) within 15% error from 5 K to 300 K.
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See supplementary material E-JAPIAU-117-043503 for an extended discussion on the results and approach presented in this work, including how our technique works, the conceptual physics and the relation to other known techniques
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See supplementary material http://dx.doi.org/10.1063/1.4905590 E-JAPIAU-117-043503 for an extended discussion on the results and approach presented in this work, including how our technique works, the conceptual physics and the relation to other known techniques.
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