Influence of compositionally induced defects on the vibrational properties of device grade Cu2ZnSnSe4 absorbers for kesterite based solar cells

Applied Physics Letters

Volumn 106, Issue 7, 2015, Pages

  Dimitrievska, Mirjana ^a   Fairbrother, Andrew ^a   Saucedo, Edgardo ^a   Pérez Rodríguez, Alejandro ^a,b   Izquierdo Roca, Victor ^a  

^a CATALONIA INSTITUTE FOR ENERGY RESEARCH IREC   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; II-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; POINT DEFECTS; SELENIUM COMPOUNDS; SOLAR CELLS; TIN COMPOUNDS; VANADIUM ALLOYS; VIBRATION ANALYSIS;

CATION VIBRATIONS; DEFECT ASSESSMENT; FREQUENCY REGIONS; INDUCED DEFECTS; RAMAN MEASUREMENTS; SPECTRAL REGION; SYSTEMATIC CHANGES; VIBRATIONAL PROPERTIES;

SOLAR ABSORBERS;

EID: 84923300600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4913262     Document Type: Article

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