N-type chalcogenides by ion implantation

Nature Communications

Volumn 5, Issue , 2014, Pages

  Hughes, Mark A ^a   Fedorenko, Yanina ^a   Gholipour, Behrad ^b   Yao, Jin ^b   Lee, Tae Hoon ^c   Gwilliam, Russell M ^a   Homewood, Kevin P ^a   Hinder, Steven ^a   Hewak, Daniel W ^b   Elliott, Stephen R ^c   Curry, Richard J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGEN; CHALCOGENIDE; GLASS; UNCLASSIFIED DRUG;

GLASS; ION; LEAD; MELTING; OPTICAL INSTRUMENT; SEMICONDUCTOR INDUSTRY;

ARTICLE; CONCENTRATION (PARAMETERS); ELECTRIC CONDUCTIVITY; ENERGY; IMPLANTATION; ION IMPLANTATION; RAMAN SPECTROMETRY; SEMICONDUCTOR; SIMULATION; STOICHIOMETRY;

EID: 84923274774     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms6346     Document Type: Article

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