Modulation of the band structure in bilayer zigzag graphene nanoribbons on hexagonal boron nitride using the force and electric fields

Materials Chemistry and Physics

Volumn 154, Issue , 2015, Pages 78-83

  Ilyasov, V V ^a   Nguyen, Chuong V ^a   Ershov, I V ^a   Nguyen, Chien D ^b   Hieu, Nguyen N ^c  

^a DON STATE TECHNICAL UNIVERSITY   (Russian Federation)

^b HANOI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Viet Nam)

^c DUY TAN UNIVERSITY   (Viet Nam)

Author keywords

Ab initio calculations; Band structure; Electronic structure; Interfaces; Semiconductors

Indexed keywords

ANTIFERROMAGNETISM; BAND STRUCTURE; BORON NITRIDE; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; GRAPHENE; GRAPHENE NANORIBBON; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); MAGNETIC MOMENTS; MODULATION; NANORIBBONS; NITRIDES; SEMICONDUCTOR MATERIALS; SUBSTRATES;

AB INITIO CALCULATIONS; ANTIFERROMAGNETICS; EXTERNAL FORCE FIELD; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INTERLAYER DISTANCE; TRANSVERSE ELECTRIC FIELD; ZIGZAG GRAPHENE NANORIBBONS;

HETEROJUNCTIONS;

EID: 84923095912     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2015.01.047     Document Type: Article

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