High-temperature colossal dielectric response in RFeO3 (R=La, Pr and Sm) ceramics

Ceramics International

Volumn 41, Issue 1, 2015, Pages 691-698

  Huang, Shuai ^a   Shi, Liran ^a   Tian, Zhaoming ^a   Yuan, Songliu ^a   Wang, Liguang ^a   Gong, Gaoshang ^a   Yin, Chongyang ^a   Zerihun, Gebru ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

C. Dielectric properties; C. Impedance

Indexed keywords

DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; GRAIN BOUNDARIES; IRON METALLOGRAPHY; PRASEODYMIUM; PRASEODYMIUM COMPOUNDS; SAMARIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SINTERING; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

COLOSSAL DIELECTRIC CONSTANT; COLOSSAL DIELECTRICS; DIELECTRIC BEHAVIOR; HIGH TEMPERATURE DIELECTRIC PROPERTIES; IMPEDANCE SPECTRUM ANALYSIS; MODIFIED PECHINI METHOD; ORTHORHOMBIC STRUCTURES; SEMICONDUCTING GRAINS;

IRON COMPOUNDS;

EID: 84922807537     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.08.124     Document Type: Article

References (29)

1. Z. Kutnjak, J. Petzelt, R. Blinc, The giant electromechanical response in ferroelectric relaxors as a critical phenomenon, Nature 441 (2006) 956-959.
2. R. Zuo, T. Granzow, D. C. Lupascu, J. Rödel, PMN-PT ceramics prepared by spark plasma sintering, J. Am. Ceram. Soc. 90 (2007) 1101-1106.
3. 6 ceramics, Scr. Mater. 64 (2011) 272-275.
4. 12 phases, J. Solid State Chem. 151 (2000) 323-325.
5. 12 ceramics, Appl. Phys. Lett. 91 (2007) 122905.
6. 12, J. Am. Ceram. Soc. 90 (2007) 638-640.
7. 12, Chem. Mater. 17 (2005) 5167-5171.
8. 12: an integrated study of electron, neutron, and X-ray diffraction, X-ray absorption fine structure, and first-principles calculations, Phys. Rev. B 81 (2010) 144203.
9. 12, J. Solid State Chem. 29 (1979) 291-298.
10. 12: onestep internal barrier layer capacitor, Appl. Phys. Lett. 80 (2002) 2153.
11. 3, Acta Mater. 59 (2011) 1338-1345.
12. 3 semiconductor ceramics, Mater. Res. Bull. 46 (2011) 1670-1673.
13. 3 semiconductor ceramics, Solid State Sci. 14 (2012) 225-228.
14. 3 semiconductor ceramics, Mater. Chem. Phys. 126 (2011) 918-921.
15. 6 ceramics, J. Appl. Phys. 108 (2010) 094108.
16. P. Thongbai, S. Maensiri, T. Yamwong, Effects of grain, grain boundary, and dc electric field on giant dielectric response in high purity CuO ceramics, J. Appl. Phys. 104 (2008) 036107.
17. 12 ceramics, J. Appl. Phys. 113 (2013) 224102.
18. 12 ceramics, J. Am. Ceram. Soc. 95 (2012) 2218-2225.
19. 3 ceramics, Appl. Phys. Lett. 94 (2009) 032902.
20. 12 ceramics, Ceram. Int. 39 (2013) S149-S152.
21. 12: post-sintering annealing studies, Phys. Rev. B 74 (2006) 024106.
22. A. K. Jonscher, Universal Relaxation Law: A Sequel to Dielectric Relaxation in Solids, Chelsea Dielectrics Press, London, 1983.
23. 12 ceramics, Adv. Mater. 14 (2002) 1321.
24. J. R. Macdonald, Impedance spectroscopy and its use in analyzing the steady-state ac response of solid and liquid electrolytes, J. Electroanal. Chem. 223 (1987) 25-50.
25. J. C. C. Abrantes, J. A. Labrincha, J. R. Frade, An alternative representation of impedance spectra of ceramics, Mater. Res. Bull. 35 (2000) 727-740.
26. 12 ceramics by Zn substitution, J. Am. Ceram. Soc. 93 (2010) 184-189.
27. T. Schedel-Niedrig, W. Weiss, R. Schlögl, Electronic structure of ultrathin ordered iron oxide films grown onto Pt (111), Phys. Rev. B 52 (1995) 17449.
28. F. A. Kröger, H. J. Vink, Relations between the concentrations of imperfections in crystalline solids, Solid State Phys. 3 (1956) 307-435.
29. 3 by impedance spectroscopy, J. Phys. D: Appl. Phys. 43 (2010) 155401.