Dopant-controlled morphology evolution of WO3 polyhedra synthesized by rf thermal plasma and their sensing properties

ACS Applied Materials and Interfaces

Volumn 7, Issue 4, 2015, Pages 2856-2866

  Yao, Mingshui ^a,b   Li, Qiaohong ^b   Hou, Guolin ^a,c   Lu, Chen ^a,c   Cheng, Benli ^a   Wu, Kechen ^b   Xu, Gang ^b   Yuan, Fangli ^a   Ding, Fei ^a   Chen, Yunfa ^a  

^a INSTITUTE OF PROCESS ENGINEERING   (China)

^b FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

crystal growth habit; dopant; MOX sensors; RF thermal plasma; WO3

Indexed keywords

ACTIVATION ENERGY; CHROMATES; CHROMIUM; CRYSTAL GROWTH; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; GEOMETRY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; SURFACE REACTIONS; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL COMPOSITIONS; CONTROLLED MORPHOLOGY; EQUILIBRIUM MORPHOLOGY; MORPHOLOGY EVOLUTION; MOX SENSORS; RECOVERY PROPERTIES; RF THERMAL PLASMA; THERMODYNAMIC FACTORS;

MORPHOLOGY;

EID: 84922422812     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5081277     Document Type: Article

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