Simulation of laterally coupled InGaZnO4-based electric-double-layer transistors for synaptic electronics

IEEE Electron Device Letters

Volumn 36, Issue 2, 2015, Pages 204-206

  Wan, Xiang ^a   Feng, Ping ^a   Wu, Guo Dong ^a   Shi, Yi ^a   Wan, Qing ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Electric double layer; Ion drift diffusion model; Laterally coupled synaptic transistors

Indexed keywords

DIFFUSION; ELECTROCHEMISTRY; ELECTROLYTES; ELECTROSTATIC DEVICES; ENERGY EFFICIENCY; GALLIUM COMPOUNDS; IONS; TRANSISTORS; ZINC COMPOUNDS;

CAPACITIVE COUPLINGS; ELECTRIC DOUBLE LAYER; ELECTRIC DOUBLE-LAYER TRANSISTORS; ELECTROSTATIC COUPLING; ION DRIFTS; LOW-POWER CONSUMPTION; NEUROMORPHIC SYSTEMS; PROTON-CONDUCTING ELECTROLYTE;

INDIUM COMPOUNDS;

EID: 84921836748     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2388952     Document Type: Article

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