Band engineering in core/shell ZnTe/cdse for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells

ACS Nano

Volumn 9, Issue 1, 2015, Pages 908-915

  Jiao, Shuang ^a   Shen, Qing ^b,c   Mora Seró, Iván ^d   Wang, Jin ^a   Pan, Zhenxiao ^a   Zhao, Ke ^a   Kuga, Yuki ^b   Zhong, Xinhua ^a   Bisquert, Juan ^d,e  

^a EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITAT JAUME I   (Spain)

^e KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

band gap engineering; high photovoltage and efficiency; quantum dot sensitized solar cells; type II core shell structure; ZnTe CdSe quantum dots

Indexed keywords

CADMIUM TELLURIDE; CELL ENGINEERING; CHEMICAL DETECTION; EFFICIENCY; ENERGY GAP; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS; SLOW LIGHT; SOLAR ABSORBERS; SOLAR CELLS; TITANIUM DIOXIDE; ZINC COMPOUNDS;

BAND GAP ENGINEERING; CORE/SHELL STRUCTURE; EFFICIENCY ENHANCEMENT; ILLUMINATION CONDITIONS; OPTOELECTRONIC PROPERTIES; PHOTO-VOLTAGE; POWER CONVERSION EFFICIENCIES; QUANTUM DOT-SENSITIZED SOLAR CELLS;

QUANTUM EFFICIENCY;

EID: 84921757664     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506638n     Document Type: Article

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