Enhanced field emission properties of Ga-doped ZnO nanosheets by using an aqueous solution at room temperature

IEEE Transactions on Electron Devices

Volumn 61, Issue 12, 2014, Pages 4192-4196

  Liu, Yi Hsing ^a   Young, Sheng Joue ^b   Ji, Liang Wen ^b   Chang, Shoou Jinn ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Aqueous solution method; field emitters; Ga doped ZnO; nanosheet

Indexed keywords

FIELD EMISSION; GALLIUM; GALLIUM ALLOYS; NANOSHEETS; SOLUTIONS; SUBSTRATES; ZINC OXIDE; ZINC SULFIDE;

AQUEOUS SOLUTION METHODS; DEVICE APPLICATION; ENHANCED FIELD EMISSION; FIELD EMITTER; FIELD ENHANCEMENT FACTOR; GA-DOPED ZNO; GLASS SUBSTRATES; WURTZITE STRUCTURE;

DOPING (ADDITIVES);

EID: 84919473620     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2362134     Document Type: Article

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