High-fidelity preparation, gates, memory, and readout of a trapped-ion quantum bit

Physical Review Letters

Volumn 113, Issue 22, 2014, Pages

  Harty, T P ^a   Allcock, D T C ^a   Ballance, C J ^a   Guidoni, L ^a,b   Janacek, H A ^a   Linke, N M ^a   Stacey, D N ^a   Lucas, D M ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; IONS; QUANTUM COMPUTERS; QUANTUM THEORY;

DYNAMIC DECOUPLING; FAULT-TOLERANT QUANTUM COMPUTING; MEMORY COHERENCE; ROOM TEMPERATURE; SINGLE QUBIT OPERATIONS; SINGLE-QUBIT GATES; SINGLE-SHOT READOUT; TECHNICAL NOISE;

TRAPPED IONS;

EID: 84918792048     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.113.220501     Document Type: Article

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