Room-temperature quantum bit storage exceeding 39 minutes using ionized donors in silicon-28

Science

Volumn 342, Issue 6160, 2013, Pages 830-833

  Saeedi, Kamyar ^a   Simmons, Stephanie ^b   Salvail, Jeff Z ^a   Dluhy, Phillip ^a   Riemann, Helge ^c   Abrosimov, Nikolai V ^c   Becker, Peter ^d   Pohl, Hans Joachim ^e   Morton, John J L ^f   Thewalt, Mike L W ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^e VITCON Projectconsult   (Germany)

^f UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS 31; QUANTUM DOT; SILICON; SILICON 28; SILICON DIOXIDE; UNCLASSIFIED DRUG;

ELECTRON; IONIZATION; PHOSPHORUS; QUANTUM MECHANICS; SILICON; TEMPERATURE;

ARTICLE; DIFFUSION; ELECTRON; ELECTROSPINNING; HYPERPOLARIZATION; IONIZATION; MAGNETIC FIELD; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; STORAGE TEMPERATURE;

EID: 84887679664     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1239584     Document Type: Article

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