Simulation of crystallization in Ge2 Sb2 Te5: A memory effect in the canonical phase-change material

Physical Review B - Condensed Matter and Materials Physics

Volumn 90, Issue 18, 2014, Pages

  Kalikka, J ^a,b   Akola, J ^a,c   Jones, R O ^d  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b Massachusetts Institute of Technology   (United States)

^c AALTO UNIVERSITY   (Finland)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84915810026     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.184109     Document Type: Article

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