Edge chemistry effects on the structural, electronic, and electric response properties of boron nitride quantum dots

Journal of Physical Chemistry C

Volumn 118, Issue 36, 2014, Pages 21110-21118

  Krepel, Dana ^a   Kalikhman Razvozov, Lena ^a   Hod, Oded ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; HYDROGENATION; HYDROXYLATION; III-V SEMICONDUCTORS; NANOCRYSTALS; NITRIDES;

ELECTRIC RESPONSE; ELECTRONIC DEVICE; ELECTRONIC GAP; FIELD INTENSITY; HEXAGONAL BORON NITRIDE; IN-PLANE ELECTRIC FIELDS; RELATIVE STABILITIES; ZIGZAG EDGES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84914166427     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp5038766     Document Type: Article

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