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Volumn 90, Issue 15, 2014, Pages

Single fermion manipulation via superconducting phase differences in multiterminal Josephson junctions

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EID: 84908431939     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.155450     Document Type: Article
Times cited : (153)

References (56)
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    • We use the parameters for an InAs/GaAs/AlSb quantum well, with layer thickness of 10 nm for both GaSb and InAs [33], in a dot with radius (Equation presented) nm, onsite disorder strength (Equation presented) meV, and (Equation presented)
    • We use the parameters for an InAs/GaAs/AlSb quantum well, with layer thickness of 10 nm for both GaSb and InAs [33], in a dot with radius (Equation presented) nm, onsite disorder strength (Equation presented) meV, and (Equation presented).
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