Hybrid integration of spin-valves and MESFETS: Technology test for future MRAM

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 272-275

  Das, J ^a   Boeve, H ^a   De Boeck, J ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; MESFET DEVICES; MRAM DEVICES; RANDOM ACCESS STORAGE;

BIT LINES; FUNCTIONALITY TESTS; HYBRID INTEGRATION; MEMORY CELL; MEMORY STATE; RESISTIVE RANDOM ACCESS MEMORY; SPIN-VALVES; WORDLINES;

MAGNETIC STORAGE;

EID: 84907899387     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J.M. Daughton, " Magnetoresistive memory technology", Thin solidfilms, 216, 1995, pp. 162-168.
2. J.L. Brown, and A.V. Pohm, "I-Mb Memory Chip Using Giant Magnetoresistive Memory Cells", IEEE Trans. Comp., Pack. & Man. Techn.-Part A, 17, 1994, pp. 373-379.
3. S. Tehrani, E. Chen, M. Durlam, T. Zhu, and H. Goronkin, "High Density Nonvolatile Magnetoresistive RAM", IEDM, 1996, pp. 193-196.
4. L.V. Melo, L.M. Rodrigues, and P.P. Freitas, "Novel Spin-Valve Memory Architecture", IEEE Trans. Magn., 33, 1997, pp. 3295-3297.
5. H. Boeve, J. Das, C. Bruynseraede, J. De Boeck, and G. Borghs, "Bit-selective read and write with coincident current scheme in spin-valve/diode MRAM cells", Electr. Lll., 34, 1998, pp. 1754-1755.
6. H. Boeve, J. Das, C. Bruynseraede, J. De Boeck, and G. Borghs, "Integration of spin-valves and GaAs diodes in magnetoresistive random access memory cells", J. Appl. Phys., 85, 1999.
7. H. Boeve, C. Bruynseraede, 1. Das, K. Dessein, G Borghs, J. De Boeck, R.C. Sousa, L.V. Melo, and P.P Freitas. "Technology assesment for the implementation of magnet-semiconductor bits in magnetic random access memory (MRAM) architectures", submitted to IEEE Trans. on Magn.