High rate CVD-diamond etching for high temperature pressure sensor applications

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 320-323

  Otterbach, R ^a   Hilleringmann, U ^a  

^a TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDS; ETCHING; PRESSURE SENSORS;

CVD-DIAMOND; ETCHING PARAMETERS; ETCHING RATE; HIGH RATE; HIGH-RATE ETCHING; HIGH-TEMPERATURE PRESSURE SENSOR; TECHNOLOGY CHANGE;

HIGH TEMPERATURE APPLICATIONS;

EID: 84907892738     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. Shiomi, "Reactive Ion Etching of Diamond in 02 and CF4 Plasma, and Fabrication of Porous Diamond for Field Emitter Cathodes", Jpn. J Appl. Phys., Vdl. 36, 1997, pp.7745-7748
2. K.K. Cha, G.A.J. Amaratunga, and T.K.S. Wong, "Patter tansfer onto carbon flms on silicon using radio fequency oxygen plasma etching", J. Vic. Sic. Technol. A 10, 1992, pp. 225-228
3. G.S. Sandhu, and W.K. Chu, "Reactive ion etching of diamond", Appl. Phys. Lett. 55, 1989, pp. 437-438
4. P. R. Chalker, and C. Johnston, "Thin Film Diamond Sensor Technology", Physica Status Soldi A, Vol. 154, 1996, pp. 455-466