Simple formulae for the effective plus-factor for transient enhanced diffusion

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 168-171

  Hobler, G ^a   Moroz, V ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SOLID STATE DEVICES;

ANALYTICAL EXPRESSIONS; DEPTH DEPENDENCE; DOSE DEPENDENCES; IMPLANT ENERGY; ION MASS; NUMERICAL DATA; ROOT MEAN SQUARE ERRORS; TRANSIENT ENHANCED DIFFUSION;

MEAN SQUARE ERROR;

EID: 84907809170     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194741     Document Type: Conference Paper

References (7)

1. G. Hobler, L. Pelaz, and C.S. Rafferty, Dose, energy, and ion species dependence of the effective plusfactor for transient enhanced diffusion , in: Process Physics and Modeling in Semiconductor Technology, The Electrochem. Soc., Pennington, 1999, pp. 75 86.
2. G. Hobler, L. Pelaz, and C.S. Rafferty, Dose, energy, and ion species dependence of the effective plusfactor for transient enhanced diffusion , submitted to J. Electrochem. Soc.
3. M.D. Giles, Transient phosphorus diffusion below the amorphization threshold , J. Electrochem. Soc., 138 (4) 1991, pp. 1160 1165.
4. L. Pelaz, G.H. Gilmer, M. Jaraiz, S.B. Herner, H.-J. Gossmann, D.J. Eaglesham, G. Hobler, C.S. Rafferty, and J. Barbolla, Modeling of the ion mass effect on transient enhanced diffusion: deviation from the +1 model , Appl. Phys. Lett. 73 (10) 1998, pp. 1421 1423.
5. S. Chakravarthi and S.T. Dunham, Influence of extended defect models on prediction of boron transient enhanced diffusion , in: Silicon Front End Technology Materials Processing and Modeling, Mat. Res. Soc. Symp. Proc. 532, Pittsburgh, PA, 1998.
6. G. Hobler, L. Pelaz, and C.S. Rafferty, Continuum treatment of spatial correlation in damage annealing , Nucl. Instr. Meth. B 153, 1999, pp. 172-176.
7. A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, L. Pelaz, D.C. Jacobson, T.E. Haynes, and Y.E. Erokhin, Reduction of transient diffusion from 1 5 keV Si-ion implantation due to surface annihilation of interstitials , Appl. Phys. Lett. 71 (21) 1997, pp. 3141-3143.