Temperature Dependence of Threshold Voltage in Thin-Film SOI MOSFET's

IEEE Electron Device Letters

Volumn 11, Issue 8, 1990, Pages 329-331

  Groeseneken, Guido ^a   Colinge, Jean Pierre ^a   Maes, Herman E ^a   Alderman, J C ^b   Holt, S ^b  

^a IMEC   (Belgium)

^b Plessey Research Caswell   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY; SEMICONDUCTOR MATERIALS - THIN FILMS; TRANSISTORS, FIELD EFFECT - MODELING;

SILICON-ON-INSULATOR (SOI); TEMPERATURE DEPENDENCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025475660     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.57923     Document Type: Article

References (7)

1. F. P. Heiman and H. S. Miller, “Temperature dependence of n-type MOS transistors,” IEEE Trans. Electron Devices, vol. ED-12, pp. 142–148, 1964.
2. L. Vadasz and A. S. Grove, “Temperature dependence of MOS transistor characteristics below saturation,” IEEE Trans. Electron Devices, vol. ED-13, pp. 863–866, 1966.
3. F. Shoucair, W. Hwang, and P. Jain, “Electrical characteristics of large scale integration (LSI) MOSFET's at very high temperatures. Part I: Theory and Part II: Experiment,” Microelectron Reliab., vol. 24, pp. 465–510, 1984.
4. W. A. Krull and J. F. Lee, “Demonstration of the benefits of SOI for high temperature operation,” in Proc. IEEE SOS/SOI Technology Workshop (St Simons Island, GA), 1988, p. 69.
5. D. P. Vu et al., “High temperature operation of ISE devices and circuits,” in Proc. IEEE SOS/SOI Technology Conference (Stateline, NV), 1989, pp. 165–166.
6. H. K. Lim and J. G. Fossum, “Threshold voltage of thin silicon-on-insulator (SOI) MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, 1983.
7. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986, p. 56.