Deep trench isolation for 600 v SOI power devices

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 497-500

  Clavelier, L ^a   Charlet, B ^a   Giffard, B ^a   Roy, M ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP TRENCH ISOLATION; SOI POWER DEVICES;

EID: 84907703974     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256922     Document Type: Conference Paper

References (6)

1. L. Clavelier and al. "600V bipolar power devices on thick SOI", ESSDERC'01, p. 395
2. U. Heinle and al. "Vertical high voltage devices on thick SOI with back end trench formation", ESSDERCG2, p. 395
3. Takao Abe and al. "Bonded SOI Technologies for High Voltage Applications", Proc. of 8th 1SPSD, 1996. p. 41
4. M. Stoisiek and al. "A dielectric isolated high-voltage IC-Technology for Off-line applications". Proc. of 7'h 1SPSD, 1995, p. 325
5. K. Endo and al. "A 500V 1A l-chip inverter IC on SOI wafer", PC1M Proc. May 1998, p. 145
6. C. S. Covven and al. "Deep trench isolation in bonded wafer SOI lcs using high density ICP etcher". El. Chein. Soc. Proc. vol 96-3, p. 364