600V bipolar power devices on thick SOI

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 395-398

  Clavelier, L ^a   Dartigues, A ^a   Buj, C ^a   Charlet, B ^a   Gidon, P ^a   Giffard, B ^a   Gimonet, S ^b   Roy, M ^b   Schaeffer, C ^c  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

POWER DEVICES; THICK SOI;

EID: 0142212502     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195284     Document Type: Conference Paper

References (7)

1. Takao Abe et al. " Bonded SOI Technologies for High Voltage Applications", Proc. of 8thISPSD, 1996, p. 41
2. M. Stoisiek et al. " A dielectric isolated high-voltage IC-Technology for Off-line applications", Proc. of 7th ISPSD, 1995,p. 325
3. M. Lida et al. " Intelligent power Ics on bonded silicon wafers", El. Chem. Soc. Proc. vol 97-36, p. 481
4. K. Endo et al. " A 500V 1A 1-chip inverter IC on SOI wafer", PCIMProc. May 1998, p. 145
5. T. Letavic et al. " 600V power conversion system-on-a-chip based on thin layer SOI", Proc. of 11th ISPSD, 1999, p. 325
6. H. Sumida, A. Hirabayashi, "noise current induced by switching of a dielectric isolated lateral insulated gate bipolar transistor on silicon on insulator", J. Appl. Phys. Vol 37 (1998).
7. C. S. Cowen et al. " Deep trench isolation in bonded wafer SOI Ics using high density ICP etcher", El. Chem. Soc. Proc. vol 96-3, p. 364