A method for extraction of power dissipating sources from interferometric thermal mapping measurements

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 243-246

  Pogany, D ^a   Litzenberger, M ^a   Bychikhin, S ^a   Gornik, E ^a   Groos, G ^b   Stecher, M ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; EXTRACTION; INTERFEROMETRY; LASER INTERFEROMETRY; MAPPING; PHASE SHIFTERS; SEMICONDUCTOR DEVICES;

ELECTROSTATIC DISCHARGE PROTECTION; ESD PROTECTION; HIGH CURRENT DENSITIES; OPTICAL PHASE SHIFTS; POWER DEVICES; TEMPORAL BEHAVIOR; THERMAL BEHAVIORS; THERMAL MAPPING;

ELECTRIC LOSSES;

EID: 84907693173     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194915     Document Type: Conference Paper

References (11)

1. V. M. Dwyer, A. J. Franklin and D. S. Campbell, "Thermal failure in semiconductor devices", Solid-St. Electron. vol. 33, pp. 553-560, 1990.
2. B. J. Baliga, Modern Power Devices, John Wiley, New York, 1987.
3. A. Amerasekera, and C. Duvvury, ESD in silicon integrated circuits, Wiley, Chichester, 1995
4. C. Fürböck, D. Pogany, M. Litzenberger, E. Gornik, N. Seliger, H. Gossner, T. Müller-Lynch, M. Stecher, W. Werner, "Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices", J. Electrostatics, vol. 49, pp. 195-213, 2000.
5. M. Litzenberger, K. Esmark, D. Pogany, C. Fürböck, H. Gossner, E. Gornik, and W. Fichtner, "Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry", Microel. Reliab., vol. 40, pp. 1359 - 1364, 2000.
6. K. Esmark, C. Fürböck, H. Gossner, G. Groos, M. Litzenberger, D. Pogany, R. Zelsacher, M. Stecher, and E. Gornik, "Simulation and experimental study of temperature distribution during ESD stress in smartpower technology ESD protection devices", Proc. IEEE Int. Reliab. Phys. Symp., (IRPS'2000), San Jose, California, April 10-13, 2000, pp. 304-309.
7. D. Pogany, S. Bychikhin, C. Fürböck, M. Litzenberger, E. Gornik, G. Groos, K Esmark, and M. Stecher, "Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry", submitted to IEEE Trans. Electron Dev., March 2002.
8. J. A. McCaulley, V. M. Donnelly, M. Vernon, and I. Taha, "Temperature dependence of the nearinfrared refractive index of silicon, gallium arsenide, and indium phosphide", Phys. Rev. B., vol. 49, pp. 7408- 7417, 1994.
9. H. S. Carslaw, and J. C. Jaeger, Conduction of heat in solids. Oxford Science Publications, 2nd Edn. 1959.
10. G. Krieger, "Thermal response of integrated circuit input devices to an electrostatic energy pulse", IEEE Trans. Electron Dev., vol. 34, pp. 877-882, 1987.
11. S. M. Sze, Physics of Semiconductor Devices, Wiley, 1981.