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Volumn , Issue , 1999, Pages 121-122
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New optimization guidelines for sub-0.1 μm CMOS technologies with 2 nm NO gate oxynitrides
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BORON;
CARRIER MOBILITY;
CMOS INTEGRATED CIRCUITS;
DOPING (ADDITIVES);
GATES (TRANSISTOR);
ION IMPLANTATION;
NITROGEN;
NITROGEN OXIDES;
OPTIMIZATION;
PERFORMANCE;
SEMICONDUCTOR DEVICE MANUFACTURE;
THRESHOLD VOLTAGE;
AREAL DENSITY;
COULOMB SCATTERING;
FIELD DEPENDENCE;
GATE OXYNITRIDES;
NITRIDATION;
NITROGEN CONCENTRATION;
SHORT CHANNEL EFFECT;
THRESHOLD VOLTAGE SHIFT;
THRESHOLD VOLTAGE SPREAD;
TRANSCONDUCTANCE DEGRADATION;
MOSFET DEVICES;
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EID: 0033281166
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (8)
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References (4)
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