Impact of constant current stressing procedure on Stress Induced Leakage current generation in thin oxides

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 544-547

  Riess, P ^a   Ghibaudo, G ^a   Pananakakis, G ^a   Brini, J ^a   Ghidini, G ^b  

^a Grenoble INP Phelma   (France)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT; DRIFT DIFFUSION; STRESS-INDUCED LEAKAGE CURRENT; THIN OXIDES;

EID: 84907682979     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. P. Olivo, T. N. Nguyen, and B. Ricco, " High field induced degradation in ultra thin SiOz films ", IEEE Transaction on electron devices, Vol 35, No 12, 1988, p. 2259.
2. K. Naruke, S. Taguchi, and M. Wada, "Stress induced leakage current limiting to scale down Eeprom runnel oxide thickness", IEDM, 1988, pp 424-427
3. DJ. Di Maria and E. Cartier, Mechanism for stress induced leakage currents in thin silicon dioxide films J. Appl. Phys., 78(6), 1995, p. 3883
4. A. Sarpa, G. Ghibaudo, G. Pananakakis, A. Paccagnella and G. Ghidini, "Reliability extrapolation model for stress induced leakage current in thin silicon oxides", Electronics Letters, p. 1342, 1997
5. E. Cartier, Characterization of the hot-electron-induced degradation in thin SiOz gate oxides, Micoelectron. Reliab, p. 201, 1998