Oxygen vacancy diffusion in bare ZnO nanowires

Nanoscale

Volumn 6, Issue 20, 2014, Pages 11882-11886

  Deng, Bei ^a   Luisa Da Rosa, Andreia ^b   Frauenheim, Th ^b   Xiao, J P ^b   Shi, X Q ^c   Zhang, R Q ^a   Van Hove, Michel A ^d  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF BREMEN   (Germany)

^c SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; II-VI SEMICONDUCTORS; NANOWIRES; OXIDE MINERALS; ZINC OXIDE;

FORMATION ENERGIES; GEOMETRIC RELAXATION; GROWTH CONDITIONS; STRUCTURAL RECONSTRUCTION; SURFACE SITES; VACANCY DIFFUSION; ZINC OXIDE (ZNO); ZNO NANOWIRES (NWS);

OXYGEN VACANCIES;

EID: 84907510343     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c4nr03582h     Document Type: Article

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