Surface hole accumulation and Fermi level stabilization energy in SnTe

Applied Physics Express

Volumn 7, Issue 9, 2014, Pages

  Nishitani, Junichi ^a,b   Detert, Douglas ^b,c   Beeman, Jeffrey ^b   Yu, Kin Man ^b   Walukiewicz, Wladek ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; HOLE CONCENTRATION; IV-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING TELLURIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; VALENCE BANDS;

HOLE DENSITIES; NATIVE DEFECT; RF-MAGNETRON SPUTTERING; STABILIZATION ENERGY; SURFACE HOLES; THICKNESS DEPENDENCE; VACUUM LEVEL; VALENCE BAND EDGES;

TIN COMPOUNDS;

EID: 84907027170     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.091201     Document Type: Article

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