SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 4, Issue 73, 2014, Pages 38689-38697

On the large capacitance of nitrogen doped graphene derived by a facile route

(6) Kumar, M Praveen a Kesavan, T a Kalita, Golap b Ragupathy, P a Narayanan, Tharangattu N a Pattanayak, Deepak K a

a CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE (India)

b NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DOPING (ADDITIVES);

ALKALINE TREATMENT; ELECTROCHEMICAL ACTIVITIES; ELECTROCHEMICAL DEVICES; HIGH SPECIFIC CAPACITANCES; HONEYCOMB LATTICES; HYDROTHERMAL PROCESS; NITROGEN DOPED GRAPHENE; SPECIFIC CAPACITANCE;

GRAPHENE;

EID: 84906860662 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c4ra04927f Document Type: Article

Times cited : (160)

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