Solution processing of cadmium sulfide buffer layer and aluminum-doped zinc oxide window layer for thin films solar cells

Surface Review and Letters

Volumn 21, Issue 4, 2014, Pages

  Alam, Mahboob ^a   Islam, Mohammad ^a,b   Achour, Amine ^c   Hayat, Ansar ^a   Ahsan, Bilal ^a   Rasheed, Haroon ^a   Salam, Shahzad ^d   Mujahid, Mohammad ^a  

^a NATIONAL UNIVERSITY OF SCIENCES AND TECHNOLOGY   (Pakistan)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

^c LAAS CNRS   (France)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

Al:ZnO; band gap; CBD; CdS; resistivity; Sol gel

Indexed keywords

BUFFER LAYERS; CADMIUM SULFIDE; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ENERGY GAP; FILM PREPARATION; GRAIN BOUNDARIES; METALLIC FILMS; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; SOLAR CELLS; THIN FILMS; ZINC OXIDE; ALUMINUM COATINGS; CADMIUM; CRYSTALLITE SIZE; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; OPTICAL FILMS; OXIDE FILMS; ZINC; ZINC SULFIDE;

ALUMINUM-DOPED ZINC OXIDE; CBD; CDS; CHEMICAL-BATH DEPOSITION; CUBIC CRYSTAL STRUCTURES; QUANTUM CONFINEMENT EFFECTS; ROOT MEAN SQUARE ROUGHNESS; ZNO;

ALUMINUM;

EID: 84906101555     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X14500590     Document Type: Article

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