Origin of the high performance in GeTe-based thermoelectric materials upon Bi2Te3 doping

Journal of the American Chemical Society

Volumn 136, Issue 32, 2014, Pages 11412-11419

  Wu, Di ^a   Zhao, Li Dong ^b   Hao, Shiqiang ^c   Jiang, Qike ^a   Zheng, Fengshan ^a   Doak, Jeff W ^c   Wu, Haijun ^a   Chi, Hang ^d   Gelbstein, Y ^e   Uher, C ^d   Wolverton, C ^c   Kanatzidis, Mercouri ^b   He, Jiaqing ^a  

^a SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NORTHWESTERN UNIVERSITY   (United States)

^c Northwestern University   (United States)

^d UNIVERSITY OF MICHIGAN   (United States)

^e BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; LEAD; MICROSTRUCTURE; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY;

BISMUTH TELLURIDE; COMPLEX MICROSTRUCTURES; CRYSTALLOGRAPHIC GROUP; ELECTRICAL CONDUCTIVITY; FIGURE OF MERITS; LATTICE THERMAL CONDUCTIVITY; LEAD-FREE MATERIAL; THERMO-ELECTRIC MATERIALS;

THERMAL CONDUCTIVITY;

BISMUTH;

ARTICLE; CONTROLLED STUDY; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; DOPING; ELECTRIC CONDUCTIVITY; PHASE SEPARATION; PHONON; REDUCTION; SOLUBILITY; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84906083933     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja504896a     Document Type: Article

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