Complete coverage of reduced graphene oxide on silicon dioxide substrates

Chinese Physics B

Volumn 23, Issue 8, 2014, Pages

  Jingfeng, Huang ^a,b   Larisika, Melanie ^c,d   Hu, Chen ^a,b   Faulkner, Steve ^e   Nimmo, Myra A ^b,e   Nowak, Christoph ^c,d   Yoong, Alfred Tok Iing ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c AIT AUSTRIAN INSTITUTE OF TECHNOLOGY   (Austria)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e LOUGHBOROUGH UNIVERSITY   (United Kingdom)

Author keywords

field effect transistor; graphene growth; graphene oxide; reduced graphene oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETHANOL; FIELD EFFECT TRANSISTORS;

CHEMICAL VAPOR DEPOSITIONS (CVD); ELECTRICAL RESISTANCES; GRAPHENE GROWTH; GRAPHENE OXIDES; INDUSTRIAL-SCALE PRODUCTION; REDUCED GRAPHENE OXIDES; REDUCED GRAPHENE OXIDES (RGO); SILICONDIOXIDE SUBSTRATES;

GRAPHENE;

EID: 84905457449     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/23/8/088104     Document Type: Article

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