SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 43, Issue 8, 2014, Pages 2895-2900

CdTe/ZnTe/GaAs heterostructures for single-crystal CdTe solar cells

(5) Su, Peng Yu a Lee, Chungho b Wang, Gwo Ching c Lu, Toh Ming c Bhat, Ishwara B a

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b FIRST SOLAR (United States)

c Rensselaer Polytechnic Institute (United States)

Author keywords

heterojunction; MOCVD; Single crystal CdTe; solar cell

Indexed keywords

BUFFER LAYERS; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; GALLIUM ARSENIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SOLAR CELLS; ZINC COMPOUNDS;

CDTE; CDTE SOLAR CELLS; CRYSTAL QUALITIES; DISLOCATION DENSITIES; GAAS SUBSTRATES; SOLAR CELL PERFORMANCE; TEMPERATURE DEPENDENT; TRANSPORT MEASUREMENTS;

CADMIUM TELLURIDE;

EID: 84904252684 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-014-3142-1 Document Type: Article

Times cited : (26)

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