Room temperature giant positive junction magnetoresistance of NiFe 2O4/n-Si heterojunction for spintronics application

Physica B: Condensed Matter

Volumn 448, Issue , 2014, Pages 184-187

  Panda, J ^a   Saha, S N ^a   Nath, T K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Current voltage characteristics; Frenkel Poole type emission; Heterojunction; Inversion layer; Junction magnetoresistance; Spin polarized tunneling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; HETEROJUNCTIONS; INVERSION LAYERS; MAGNETORESISTANCE; SILICON;

CURRENT TRANSPORT MECHANISM; INCREASING TEMPERATURES; NONLINEAR BEHAVIOR; SILICON SUBSTRATES; SPIN-POLARIZED CARRIERS; SPIN-POLARIZED TUNNELING; SPINTRONICS APPLICATION; TEMPERATURE DEPENDENT;

TUNNELLING MAGNETORESISTANCE;

EID: 84904070555     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2014.04.002     Document Type: Article

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