Mixed oxide semiconductors based on bismuth for photoelectrochemical applications

Journal of Solid State Electrochemistry

Volumn 18, Issue 7, 2014, Pages 1963-1971

  Ropero Vega, J L ^a   Melendez A M ^a   Pedraza Avella, J A ^a   Candal, Roberto J ^b   Nino Gomez M E ^a  

^a UNIVERSIDAD INDUSTRIAL DE SANTANDER   (Colombia)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

Author keywords

Bismuth oxide; Dip coating; Photoelectrochemistry; Sol gel; Visible light radiation

Indexed keywords

AGGLOMERATION; COATINGS; CRYSTALLINE MATERIALS; CYCLIC VOLTAMMETRY; ELECTROCHEMISTRY; ENERGY DISPERSIVE SPECTROSCOPY; PHOTOELECTROCHEMICAL CELLS; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BISMUTH OXIDES; DIP COATING; MIXED OXIDE SEMICONDUCTORS; OPEN CIRCUIT POTENTIAL MEASUREMENTS; PHOTO-ELECTROCHEMISTRY; PHOTOELECTROCHEMICAL APPLICATIONS; PHOTOELECTROCHEMICAL PROPERTIES; VISIBLE LIGHT;

OXIDE FILMS;

EID: 84903635738     PISSN: 14328488     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10008-014-2420-4     Document Type: Article

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