Epitaxial growth and structural transition of VO2/MgF 2(001)

Japanese Journal of Applied Physics

Volumn 53, Issue 5 SPEC. ISSUE 1, 2014, Pages

  Shibuya, Keisuke ^a   Sawa, Akihito ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; PULSED LASER DEPOSITION; X RAY DIFFRACTION;

DEPOSITION TEMPERATURES; EPITAXIAL STRAIN; METAL-INSULATOR PHASE TRANSITION; STRUCTURAL PHASE TRANSITION; STRUCTURAL TRANSITIONS;

DEPOSITION;

EID: 84903278352     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.05FF03     Document Type: Conference Paper

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