Free-carrier absorption and Burstein-Moss shift effect on quantum efficiency in heterojunction silicon solar cells

Vacuum

Volumn 108, Issue , 2014, Pages 39-44

  Kim, Sangho ^a   Park, Jinjoo ^a   Kim, Sunbo ^a   Lee, Youngseok ^a   Ahn, Shihyun ^a   Cho, Jaehyun ^a   Ju, Minkyu ^a   Lakshminarayan, Nariangadu ^b   Dao, Vinh Ai ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b MADRAS CHRISTIAN COLLEGE   (India)

Author keywords

Burstein Moss effect; Free carrier absorption; Heterojunction solar cells; Spectroscopic ellipsometry

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ENERGY GAP; GRAIN BOUNDARIES; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SPECTROSCOPIC ELLIPSOMETRY;

ANTI-REFLECTION LAYERS; BURSTEIN-MOSS EFFECTS; CRYSTALLOGRAPHIC ORIENTATIONS; EXTINCTION COEFFICIENT (K); FREE CARRIER ABSORPTION; HETEROJUNCTION SOLAR CELLS; INDIUM TIN OXIDE FILMS; NEAR INFRARED REGION;

SILICON SOLAR CELLS;

EID: 84902649411     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2014.05.015     Document Type: Article

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