SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 25, Issue , 2014, Pages 143-147

GaAs film for photon-enhanced thermionic emission solar harvesters

(5) Tang, Weidong a,b Yang, Wenzheng c Yang, Yang a,b Sun, Chuandong c Cai, Zhipeng a,b

a State Key Laboratory of Transient Optics and Photonics (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

c XI AN INSTITUTE OF OPTICS AND PRECISION MECHANICS (China)

Author keywords

Electric field emission; GaAs film; PETE; Thermionic emission

Indexed keywords

ELECTRIC FIELDS; ELECTRON AFFINITY; EPITAXIAL FILMS; FIELD EMISSION; GALLIUM ARSENIDE; HARVESTERS; III-V SEMICONDUCTORS; PHOTONS; SEMICONDUCTING GALLIUM; LIGHT EMITTING DIODES;

CALCULATED VALUES; GAAS FILMS; PETE; SAMPLE EMISSION; SOLAR ELECTRICITY; THERMIONIC EFFECTS; THERMIONIC ENERGIES; THERMIONIC FIELD EMISSION;

THERMIONIC EMISSION;

EID: 84902299711 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2013.10.009 Document Type: Article

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