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Physical Review Letters

Volumn 112, Issue 19, 2014, Pages

Transport properties of a 3D topological insulator based on a strained high-mobility HgTe film

(6) Kozlov, D A a,b Kvon, Z D a,b Olshanetsky, E B a Mikhailov, N N a Dvoretsky, S A a Weiss, D c

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

b NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

c UNIVERSITY OF REGENSBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; SURFACE STATES;

CONDUCTION BAND ELECTRONS; DIRAC ELECTRONS; HIGH MOBILITY; MAGNETO TRANSPORT PROPERTIES; MAGNETO-TRANSPORT MEASUREMENT; TOP GATE; TOPOLOGICAL INSULATORS;

ELECTRIC INSULATORS;

EID: 84901020047 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.112.196801 Document Type: Article

Times cited : (113)

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