Band gap effects of hexagonal boron nitride using oxygen plasma

Applied Physics Letters

Volumn 104, Issue 16, 2014, Pages

  Singh, Ram Sevak ^a,e   Tay, Roland Yingjie ^a,b   Chow, Wai Leong ^a   Tsang, Siu Hon ^b   Mallick, Govind ^b,c   Teo, Edwin Hang Tong ^a,d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; NITROGEN PLASMA; OXYGEN; PHOTOELECTRONS; PLASMA APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION EDGES; BAND GAP NARROWING; CHEMICAL VAPOR DEPOSITION PROCESSED; ELECTRICAL RESISTANCES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); NITROGEN VACANCIES; OXYGEN PLASMA TREATMENTS;

OXYGEN VACANCIES;

EID: 84900318503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4872318     Document Type: Article

References (18)

1. Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, Science 317(5840), 932 (2007).
2. L. Ci, L. Song, C. Jin, D. Jariwala, D. Wu, Y. Li, A. Srivastava, Z. F. Wang, K. Storr, L. Balicas, F. Liu, and P. M. Ajayan, Nature Mater. 9(5), 430 (2010).
3. K. Suenaga, C. Colliex, N. Demoncy, A. Loiseau, H. Pascard, and F. Willaime, Science 278(5338), 653 (1997).
4. K. Watanabe, T. Taniguchi, and H. Kanda, Nature Mater. 3(6), 404 (2004).
5. W. Q. Han, L. Wu, Y. Zhu, K. Watanabe, and T. Taniguchi, Appl. Phys. Lett. 93(22), 223103 (2008).
6. Y. J. Cho, C. H. Kim, H. S. Kim, J. Park, H. C. Choi, H. J. Shin, G. Gao, and H. S. Kang, Chem. Mater. 21(1), 136 (2009).
7. G. Gou, B. Pan, and L. Shi, J. Am. Chem. Soc. 131(13), 4839 (2009);
8. L. Liu, T. K. Sham, and W. Han, Phys. Chem. Chem. Phys. 15(18), 6929 (2013).
9. X. J. Dai, Y. Chen, Z. Chen, P. R. Lamb, L. H. Li, J. Plessis, D. G. McCulloch, and X. Wang, Nanotechnology 22(24), 245301 (2011).
10. J. Wu and W. Zhang, Solid State Commun. 149(11), 486 (2009).
11. H. X. Zhang and P. X. Feng, ACS Appl. Mater. Interfaces 4(1), 30 (2012).
12. R. Y. Tay, X. Wang, S. H. Tsang, G. C. Loh, R. S. Singh, H. Li, G. Mallick, and E. H. T. Teo, J. Mater. Chem. C 2(9), 1650 (2014).
13. R. Y. Tay, M. H. Griep, G. Mallick, S. H. Tsang, R. S. Singh, T. Tumlin, E. H. T. Teo, and S. P. Karna, Nano Lett. 14(2), 839 (2014).
14. X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colomba, and R. S. Ruoff, Nano Lett. 9(12), 4359 (2009).
15. N. Ooi, A. Rairkar, L. Lindsley, and J. B. Adams, J. Phys.: Condens. Matter 18(1), 97 (2006).
16. T. H. Yuzuriha and D. W. Hess, Thin Solid Films 140(2), 199 (1986).
17. L. A. Silva, S. C. Guerini, and V. Lemos, IEEE Trans. Nanotechnol. 5(5), 517 (2006)
18. Z. F. Zhang, T. G. Zhou, and X. Zuo, Acta Phys. Sin. 62(8), 83102 (2013).