SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 35, 2014, Pages 18378-18381

Tunable channel width of a UV-gate field effect transistor based on ZnO micro-nano wire

(9) Zheng, Xin a Sun, Yihui a Yan, Xiaoqin a Chen, Xiang a Bai, Zhiming a Lin, Pei a Shen, Yanwei a Zhao, Yanguang a Zhang, Yue a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

[No Author keywords available]

Indexed keywords

SILVER; ZINC OXIDE;

CARRIER DIFFUSIONS; DEPLETION LAYER; DEPLETION-MODE JFET; FAST RESPONSE TIME; IV CHARACTERISTICS; ORDERS OF MAGNITUDE; ULTRA VIOLET DETECTION; UV LIGHT INTENSITY;

FIELD EFFECT TRANSISTORS;

EID: 84899585163 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c4ra01661k Document Type: Article

Times cited : (15)

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