An effective growth method to improve the homogeneity of relaxor ferroelectric single crystal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3

Crystal Research and Technology

Volumn 49, Issue 2-3, 2014, Pages 122-128

  Wang, Xian ^a   Zhang, Haiwu ^a   Lin, Di ^a   Wang, Sheng ^a   Zhao, Xiangyong ^a   Chen, Jianwei ^a   Deng, Hao ^a   Li, Xiaobing ^a   Xu, Haiqing ^a   Luo, Haosu ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Compositional segregation; Ferroelectric single crystal; Gradient composition raw materials; Morphotropic phase boundary; Multiround growth

Indexed keywords

CRYSTAL GROWTH FROM MELT; FERROELECTRICITY; LEAD TITANATE; MAGNESIUM COMPOUNDS; NIOBIUM COMPOUNDS; SINGLE CRYSTALS; TITANIUM COMPOUNDS;

COMPOSITIONAL HOMOGENEITY; COMPOSITIONAL SEGREGATION; FERROELECTRIC SINGLE CRYSTALS; MODIFIED BRIDGMAN METHOD; MORPHOTROPIC PHASE BOUNDARIES; PBO3-PBTIO3 CRYSTALS; PMN-PT SINGLE CRYSTAL; RELAXOR FERROELECTRIC SINGLE CRYSTALS;

FERROELECTRIC MATERIALS;

EID: 84898844873     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201300320     Document Type: Article

References (30)

1. J. Kuwata, K. Uchino, and S. Nomura, Jpn. J. Appl. Phys. 21, 1298 (1982).
2. T. Shrout, Z. Chang, and N. Kim, Ferr. Lett. 12, 63 (1990).
3. R. Service, Science 275, 1878 (1997).
4. G. Xu, H. Luo, Y. Guo, Y. Gao, H. Xu, Z. Qi, W. Zhong, and Z. Yin, Solid. State. Comm. 20, 321 (2001).
5. K. Harada, Y. Hosono, T. Kobayashi, Y. Yamashita, S. Wada, and T. Tsurumi, J. Cryst. Growth. 238, 848 (2002).
6. Z. Duan, G. Xu, X. Wang, D. Yang, X. Pan, and P. Wang, Solid. State. Comm. 134, 559 (2005).
7. J. Jiao, L. Li, B. Ren, H. Guo, H. Deng, W. Di, X. Zhao, W. Jing, and H. Luo, J. Appl. Phys. 111, 043909 (2012).
8. Y. Tang, X. Wan, X. Zhao, X. Pan, D. Lin, H. Luo, J. Sun, X. Meng, and J. Zhu, J. Appl. Phys. 98, 084104 (2005).
9. W. Wang, S. Wing Or, Q. Yue, Y. Zhang, J. Jiao, B. Ren, D. Lin, C. Leung, X. Zhao, and H. Luo, Sens. & Actu. A. 192, 69 (2013).
10. S. Priya, D. Viehland, and K. Uchino, Appl. Phys. Lett. 80, 4217 (2002).
11. U. Kodama, M. Osada, O. Kumon, and T. Nishimoto, Am. Ceram. Soc. Bull. 48, 1122 (1969).
12. N. Yasuda, H. Ohwa, M. Kume, and Y. Yamashita, J. Cryst. Growth. 229, 299 (2001).
13. Z. Duan, G. Xu, X. Wang, and D. Yang, J. Cryst. Growth. 275, e1907 (2005).
14. R. Eitel, S. Zhang, T. Shrout, C. Randall, and I. Levin, J. Appl. Phys. 96, 2828 (2004).
15. S. Zhang, C. Randall, and T. Shrout, Jpn. J. Appl. Phys. 42, L1152 (2003).
16. N. Yasuda, H. Ohwa, D. Hasegawa, H. Hosono, Y. Yamashita, M. Iwata, and Y. Ishibashi, Ferroelectrics. 270, 247 (2002).
17. Y. Hosono, Y. Yamashita, K. Hirayama, and N. Ichinose, Jpn. J. Appl. Phys. 44, 7037 (2005).
18. Y. Guo, H. Luo, T. He, X. Pan, and Z. Yin, Mater. Res. Bull. 38, 857 (2003).
19. X. Huo, S. Zhang, G. Liu, R. Zhang, J. Luo, R. Sahui, W. Cao, and T. Shrout, J. Appl. Phys. 113, 074106 (2013).
20. G. Xu, K. Chen, D. Yang, and J. Li, Appl. Phys. Lett. 90, 032901 (2007).
21. S. Zhang, J. Luo, W. Hackenberger, N. Sherlock, R. Meyer, and T. Shrout, J. Appl. Phys. 105, 104506 (2009).
22. X. Wang, Z. Xu, Z. Li, and H. Chen, Ferroelectrics. 401, 173 (2010).
23. X. Li, Z. Wang, C. He, X. Long, and Z. Ye, J. Appl. Phys. 111, 034105 (2012).
24. E. Sun, W. Cao, W. Jiang, and P. Han, Appl. Phys. Lett. 99, 32901 (2011).
25. I. Bhaumik, G. Singh, S. Ganesamoorthy, A. Karnal, M. Tiwari, and V. Tiwari, Cryst. Res. Technol. 42, 356 (2007).
26. B. Srimathy, R. Jayavel, S. Ganesamoorthy, I. Bhaumik, A. Karnal, V. Natarajan, E. Varadarajan, and J. Kumar, Cryst. Res. Technol. 47, 523 (2012).
27. G. Xu, X. Wang, D. Yang, Z. Duan, C. Feng, and K. Chen, Appl. Phys. Lett. 86, 032902 (2005).
28. J. Tian, P. Han, X. Huang, H. Pan, J. Carroll, and D. Payne, Appl. Phys. Lett. 91, 222903 (2007).
29. S. Zhang, J. Luo, W. Hackenberger, and T. R. Shrout, J. Appl. Phys. 104, 064106 (2008).
30. X. Wang, Z. Xu, Z. Li, and H. Chen, Solid. State. Comm. 150, 1425 (2010). Municipality