Growth and piezo-/ferroelectric properties of PIN-PMN-PT single crystals

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Li, Xiuzhi ^a   Wang, Zujian ^a   He, Chao ^a   Long, Xifa ^a   Ye, Zuo Guang ^b  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

^b SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; DIELECTRIC LOSS TANGENT; ELECTRO MECHANICAL COUPLING FACTORS; FERROELECTRIC PROPERTY; GROWN CRYSTALS; PIEZOELECTRIC COEFFICIENT; ROOM TEMPERATURE; SOLID SOLUTION CRYSTALS; STRAIN VALUES; TOP SEEDED SOLUTION GROWTH;

DIELECTRIC LOSSES; ELECTROMECHANICAL COUPLING; FERROELECTRICITY; LEAD;

SINGLE CRYSTALS;

EID: 84863143176     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681290     Document Type: Article

References (41)

1. Z. G. Ye, Mater. Res. Soc. Bull. 34 (4), 277 (2009). 10.1557/mrs2009.79
2. S. E. Park and T. R. Shrout, J. Appl. Phys. 82, 1804 (1997). 10.1063/1.365983
3. H. S. Luo, G. S. Xu, P. C. Wang, and Z. W. Yin, Ferroelectrics 231, 79 (1999). 10.1080/00150199908014518
4. M. Dong and Z. G. Ye, J. Cryst. Growth 209, 81 (2000). 10.1016/S0022-0248(99)00482-0 (Pubitemid 30527037)
5. A. A. Bokov and Z. G. Ye, Appl. Phys. Lett. 77, 1888 (2000). 10.1063/1.1310629
6. A. A. Bokov and Z. G. Ye, Phys. Rev. B 66, 094112 (2002). 10.1103/PhysRevB.66.094112
7. A. A. Bokov and Z. G. Ye, J. Mater. Sci. 41, 31 (2006). 10.1007/s10853-005-5915-7 (Pubitemid 43260928)
8. X. F. Long and Z. G. Ye, Acta Mater. 55, 6507 (2007). 10.1016/j.actamat.2007.08.009 (Pubitemid 47562841)
9. L.C. Lim, M. Shanthi, K. K. Rajan, and C. Y. H. Lim, J. Cryst. Growth 282, 330 (2005). 10.1016/j.jcrysgro.2005.05.011 (Pubitemid 41085125)
10. G. M. Gehring, W. Z. Chen, Z. G. Ye, and G. Shirane, J. Phys: Condens. Matter 16, 7113 (2004). 10.1088/0953-8984/16/39/042
11. A. K. A. Slodczyk and Z. Ujma, J. Cryst. Growth 289, 134 (2006). 10.1016/j.jcrysgro.2005.11.009 (Pubitemid 43277792)
12. A. Sehirlioglu, D. A. Payne, and P. J. Han, Appl. Phys. 99, 064101 (2006). 10.1063/1.2179972
13. Q. Wan, C. Chen, and Y. P. Shen, J. Mater. Sci. 41, 2993 (2006). 10.1007/s10853-006-6766-6 (Pubitemid 43814453)
14. B. Noheda, D. E. Cox, G. Shirane, J. Gao, and Z. G. Ye, Phys. Rev. B 66, 054104 (2002). 10.1103/PhysRevB.66.054104
15. M. Alguero, A. Moure, L. Pardo, J. Holc, and M. Kosec, Acta Mater. 54, 501 (2006). 10.1016/j.actamat.2005.09.020 (Pubitemid 41780895)
16. Z. Kutnjak, J. Petzelt, and R. Blinc, Nature 441, 956 (2006). 10.1038/nature04854 (Pubitemid 43980345)
17. J. Tian, P. D. Han, X. L. Huang, H. X. Pan, J. F. Carroll III, and D. A. Payne, Appl. Phys. Lett. 91, 222903 (2007). 10.1063/1.2817743 (Pubitemid 350191645)
18. Y. P. Guo, H. S. Luo, T. H. He, and Z.W. Yin, Solid State Commun. 123, 417 (2002). 10.1016/S0038-1098(02)00311-3 (Pubitemid 34992056)
19. Z. Q. Duan, G. S. Xu, X. F. Wang, D. F. Yang, X. F. Pan, and P. C. Wang, Solid State Commun. 134, 559 (2005). 10.1016/j.ssc.2005.02.022 (Pubitemid 40539078)
20. S. J. Zhang, C. A. Randall, and T. R. Shrout, IEEE Trans. Ultranson. Ferroelectr. Freq. Control 52, 564 (2005). 10.1109/TUFFC.2005.1428037 (Pubitemid 40718600)
21. N. Yasuda, H. Ohwa, M. Kume, and Y. Yamashita, Jpn. J. Appl. Phys. Part 2 39, L66 (2000). 10.1143/JJAP.39.L66
22. H. Q. Fan, Mater. Sci. Forum 475, 4179 (2005). 10.4028/www.scientific. net/MSF.475-479.4179
23. N. Yasuda, H. Ohwa, M. Kume, Y. Hosono, Y. Yamashita, S. Ishino, H. Terauchi, M. Iwata, and Y. Ishibashi, Jpn. J. Appl. Phys. 40, 5664 (2001). 10.1143/JJAP.40.5664
24. S. J. Zhang, S. Rhee, C. A. Randall, and T. R. Shrout, Jpn. J. Appl. Phys. 41, 722 (2002). 10.1143/JJAP.41.722
25. Y. H. Bing and Z. G. Ye, J. Cryst. Growth 250, 118 (2003). 10.1016/S0022-0248(02)02237-6
26. C. He, X. Z. Li, Z. J. Wang, X. F. Long, S. Y. Mao, and Z. G. Ye, Chem. Mater. 22 (19), 5588 (2010). 10.1021/cm101626a
27. Y. Guo, H. Xu, H. Luo, and Z. Yin, J. Cryst. Growth 226, 111 (2001). 10.1016/S0022-0248(01)01362-8 (Pubitemid 32529410)
28. Y. Hosono, Y. Yamashita, H. Sakamoto, and N. Ichinose, Jpn. J. Appl. Phys. 41, L1240 (2002). 10.1143/JJAP.41.L1240
29. Y. Hosono, Y. Yamashita, H. Sakamoto, and N. Ichinose, Jpn. J. Appl. Phys. 42, 5681 (2003). 10.1143/JJAP.42.5681
30. Y. Hosono, Y. Yamashita, and N. Ichinose, IEEE Ultranson. Symp. 1, 770 (2003).
31. S. J. Zhang, J. Luo, W. Hackenberger, N. P. Sherlock, R. J. Meyer, Jr., and T. R. Shrout, J. Appl. Phys. Control 105, 104506 (2009). 10.1063/1.3131622
32. G. S. Xu, K. Chen, D. F. Yang, and J. B. Li, Appl. Phys. Lett. 90, 032901 (2007). 10.1063/1.2431706 (Pubitemid 46146372)
33. Y. Hosono, Y. Yamashita, H. Sakamoto, and N. Ichinose, Jpn. J. Appl. Phys. 42, 6062 (2003). 10.1143/JJAP.42.6062
34. P. Yu, F. F. Wang, D. Zhou, W. W. Ge, X. Y. Zhao, H. S. Luo, J. L. Sun, X. J. Meng, and J. H. Chu, Appl. Phys. Lett. 92, 252907 (2008). 10.1063/1.2942378
35. Y. Hosono, Y. Yamashita, K. Hirayama, and N. Ichinose, Jpn. J. Appl. Phys. 44, 7037 (2005). 10.1143/JJAP.44.7037 (Pubitemid 43183061)
36. Y. Hosono and Y. Yamashita, J. Electroceram. 17, 577 (2006). 10.1007/s10832-006-5415-4
37. S. J. Zhang, J. Luo, W. Hackenberger, and T. R. Shrout, J. Appl. Phys. Control 104, 064106 (2008). 10.1063/1.2978333
38. T. Karaki, M. Nakamoto, Y. Sumiyoshi, M. Adachi, Y. Hosono, and Y. Yamashita, Jpn. J. Appl. Phys. 42, 6059 (2003). 10.1143/JJAP.42.6059
39. X. F. Long, A. A. Bokov, Z. G. Ye, W. G. Qu, and X. L. Tan, J. Phys.: Condens. Matter 20, 015210 (2008). 10.1088/0953-8984/20/01/015210 (Pubitemid 350265577)
40. X. F. Long, J. B. Lin, X. Z. Li, Z. J. Wang, and Z. G. Ye, Cryst. Growth Des. 9, 657 (2009). 10.1021/cg800878x
41. R. Iya, IEEE Standard on Piezoelectricity (ANSI/IEEE Std 176-1987).