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Volumn 9, Issue 6, 2014, Pages 2944-2954

Concentration dependent optical and structural properties of Mo doped ZnTe thin films prepared by e-beam evaporation method

Author keywords

E beam evaporation; Optical band gap; XRD and AFM characteristi; ZnTe:Mo

Indexed keywords


EID: 84897899097     PISSN: None     EISSN: 14523981     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (32)

References (33)
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    • United Kingdom - Malaysia - Ireland, Engineering Science Conference
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    • (2011)
    • Yei Ying, L.1    Bt Mazlan, N.R.2    Joseph Sahaya Anand, T.3
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    • Transition-Metal Ions in II-VI Semiconductors : Zinc Selenide and Zinc Telluride West Virginia University
    • Ming Luo, Transition-Metal Ions in II-VI Semiconductors : Zinc Selenide and Zinc Telluride, West Virginia University (2006)
    • (2006)
    • Luo, M.1
  • 25
    • 84897907946 scopus 로고    scopus 로고
    • Int J. Innovative Research in Science, Engineering and Technology
    • M. Eman Abid, Dr. M. Inaam Abdul Majeed, Dr. A. Kadhim Aadim, Int J. Innovative Research in Science, Engineering and Technology, 2 (2013)
    • (2013) , vol.2
    • Eman Abid, M.1    Inaam Abdul Majeed, M.2    Kadhim Aadim, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.