Electrical conduction mechanism and dielectric properties of vanadium doped ZnTe thin films

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 7, 2007, Pages 2192-2199

  Hossain, M S ^a   Islam, R ^b   Khan, K A ^b  

^a RAJSHAHI UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

^b UNIVERSITY OF RAJSHAHI   (Bangladesh)

Author keywords

Dielectric properties; E beam technique; Electrical conduction mechanism; ZnTe: V thin films

Indexed keywords

DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; FILM PREPARATION; II-VI SEMICONDUCTORS; SUBSTRATES; TEMPERATURE; VANADIUM; ZINC COMPOUNDS;

CONDUCTION MECHANISM; CORRELATED BARRIER HOPPING; E-BEAMS; ELECTRICAL CONDUCTION MECHANISMS; ELECTRON TRANSPORT; ELECTRONIC CONDUCTION; INCREASING TEMPERATURES; THERMALLY ACTIVATED;

THIN FILMS;

EID: 38549165339     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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