Large area carbon nanosheet capacitors

ECS Solid State Letters

Volumn 3, Issue 3, 2014, Pages

  Qaid, M ^a,b,c   Put, B ^a,d   Cott, D J ^a   AlSalhi, M S ^c   Stesmans, A ^d   Vereecken, P M ^a,d   Radu, I P ^a,d  

^a IMEC   (Belgium)

^b KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c KING SAUD UNIVERSITY   (Saudi Arabia)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CAPACITANCE DENSITY; CARBON NANOSHEETS; HIGH CONDUCTIVITY; LARGE SURFACE AREA; METALLIC ELECTRODES; POOLE-FRENKEL; SCHOTTKY EMISSIONS;

CAPACITANCE; CARBON; NANOSHEETS; STRONTIUM TITANATES;

ELECTROLYTIC CAPACITORS;

EID: 84897769008     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.008403ssl     Document Type: Article

References (18)

1. B. Put, C. Adelmann, J. Swerts, R. Rooyackers, H. Tielens, S. Van, Elshocht,M. Heyns, and I. P. Radu, Electrochem. Solid-State Lett., 2, (2013).
2. P. Banerjee, I. Perez, L. Henn-Lecordier, S. B. Lee, and G. W. Rubloff, Nature Nanotech., 4, 292-296 (2009).
3. P. Banerjee and A. Ditali, IEEE Electron Device Letters, 25, 574-576 (2004).
4. P. H. Morel, G. Haberfehlner, D. Lafond, G. Audoit, V. Jousseaume, C. Leroux, M. Fayolle-Lecocq, T. Baron, and T. Ernst, Appl. Phys. Lett., 101, (2012).
5. Z-S. Wu, K. Parvez, X. Feng, and K. Mullen, Nature Comm., 4, (2013).
6. S. Biswas and L. T. Drzal, App. Mat. and Interf., 2, (2010).
7. J. J. Yoo, K. Balakrishnan, J. Huang, V. Meunier, B. G. Sumpter, A. Srivastava, M. Conway, A. L. M. Reddy, J. Yu, R. Vajtai, and P. M. Ajayan, Nano Lett., 11, (2011).
8. J. R. Miller, R. A. Outlaw, and B. C. Holloway, Science, 329, (2010).
9. S. Deheryan,D. J. Cott,M.Heyns, and P. M.Vereecken, ECSmeeting abstract (223rd ECS Meeting), 2013.
10. D. J. Cott, M. Verheijen, O. Richard, I. P. Radu, S. De Gendt, S. Van Elshocht, and P. M. Vereecken, Carbon, 58, (2013).
11. M. Popovici, K. Tomida, J. Swerts, P. Favia, A. Delabie, H. Bender, C. Adelmann, H. Tielens, B. Brijs, M. A. Pawlak, M.-S. Kim, L. Altimime, S. Van Elshocht, and J. Kittl, Phys. Status Solidi A, 208, (2011).
12. J. McPherson, J.-Y. Kim, A. Shanware, and H. Mogul, App. Phys. Lett., 82, (2003).
13. S. M. Sze and K. Kwok, Physics of semiconductor devices, p227, John Wiley & Sons, New Jersey (2007).
14. B. Kaczer, S. Clima, K. Tomida, B. Govoreanu, M. Popovici, M.-S. Kim, J. Swerts, A. Belmonte, W.-C. Wang, V. V. Afanas'ev, A. S. Verhulst, G. Pourtois, G. Groeseneken, and M. Jurczak, J. Vac. Sci. Technol. B, 31, (2013).
15. S. W. Lee, J. H. Han, and C. S. Hwang, Electrochem. Solid-State Lett., 12, (2009).
16. Q. L. Zhou, K. J. Jin, H. B. Lu, P. Han, Z. H. Chen, K. Zhao, Y. Zhou, and G. Z. Yang, Europhys. Lett, 71, (2005).
17. N. Menou, M. Popovici, S. Clima, K. Opsomer, W. Polspoel, B. Kaczer, G. Rampelberg, K. Tomida, M. A. Pwalak, C. Detavernier, D. Pierreux, J. Swerts, J. W. Maes, D.Manger, M. Badylevich, V. Afanasiev, T. Conard, P. Favia, H. Bender, B. Brijs, W. Vandervorst, S. Van Elshocht, G. Pourtois, D. J. Wouters, S. Biesemans, and J. Kittl, J. App. Phys., 106, (2009).
18. M. A. Pawlak, B. Kaczer,M.-S. Kim,M. Popovici, K. Tomida, J. Swerts, K. Opsomer, W. Polspoel, P. Favia, C. Demeurisse,W.-C.Wang, V. V. Afanas'ev,W. Vandervorst, H. Bender, I. Debusschere, L Altimime, and J. A. Kittl, App. Phys. Lett., 97, (2010).