|
Volumn 1998-September, Issue , 1998, Pages 178-180
|
The effect of a SiO2 interface layer on CPW lines and Schottky barrier diodes on HRS substrates
a b a a b b |
Author keywords
[No Author keywords available]
|
Indexed keywords
DIODES;
MONOLITHIC INTEGRATED CIRCUITS;
SILICA;
SILICON OXIDES;
SUBSTRATES;
CPW LINE;
DISSIPATION LOSS;
HIGH RESISTIVITY;
INTERFACE LAYER;
LEAKAGE CURRENT EFFECT;
LINE CONDUCTORS;
SCHOTTKY DIODES;
SCHOTTKY BARRIER DIODES;
|
EID: 84897532794
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SMIC.1998.750216 Document Type: Conference Paper |
Times cited : (8)
|
References (6)
|