Microwave ptsi-si schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 5 PART 2, 1998, Pages 641-646

  Wu, Yunghong ^a   Mervyn Armstrong, B ^a   Gamble, Harold S ^a   Hu, Zhirun ^a   Chen, Qiang ^a   Yang, Suidong ^a   Fusco, Vincent F ^a   Carson Stewart, J A ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ION IMPLANTATION; MICROWAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHOSPHORUS; PLATINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

DETECTOR DIODES; SURFACE ORIENTED PLANAR SCHOTTKY DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0032072386     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.668676     Document Type: Article

References (9)

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